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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT56AF
DESCRIPTION *With TO-220Fa package *High voltage;high speed *High power dissipation APPLICATIONS *Switching mode power supply
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolut maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 6 8 10 4 50 150 -65~150 UNIT V V V A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA ;LC=125mH IE=1mA ;IC=0 IC=4A ;IB=0.8A VCE=1000V; VBE=0 Tj=150 IC=1A ; VCE=5V IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz 15 4 MIN 450 6
BUT56AF
SYMBOL V(BR)CEO V(BR)EBO VCEsat ICES hFE-1 hFE-2 fT
TYP.
MAX
UNIT V V
2.0 1.0 2.0 45
V mA
10
MHz
Switching times toff tf Turn-off time Fall time 4 1 s s
IC=4A ;IB1=-IB2=1.25A tp=20s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUT56AF
Fig.2 Outline dimensions (unindicated tolerance:0.15mm)
3


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